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Results on high mobility InGaAs to replace poly-Si as channel material presented at IEDM 2015.
December 7, 2015
By: DAVID SAVASTANO
Editor, Ink World Magazine
During the IEEE IEDM conference, imec showed for the first time the integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the plug (holes) with the diameter down to 45nm. The new channel material improves transconductance (gm) and read current, which is crucial to enable further VNAND cost reduction by adding additional layers in 3D vertical architecture. Current 3D NAND devices, featuring a poly-Si channel, are characterized by drive current ...
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